Semiconductor Device Structures with Modulated Doping and Related Methods

ABSTRACT

A semiconductor device may include a doped semiconductor region having a modulated dopant concentration. The doped semiconductor region may be a silicon doped Group III nitride semiconductor region with a dopant concentration of silicon being modulated in the Group III nitride semiconductor region. In addition, a semiconductor active region may be configured to generate light responsive to an electrical signal therethrough. Related methods, devices, and structures are also discussed.

FIELD OF THE INVENTION

This invention relates to semiconductor devices and/or fabricationmethods therefore, and more particularly to structures, devices and/ormethods which may be used in Group III nitride semiconductor devices.

BACKGROUND OF THE INVENTION

Light emitting diodes are widely used in consumer and commercialapplications. As is well known to those having skill in the art, a lightemitting diode generally includes a diode region on a microelectronicsubstrate. The microelectronic substrate may comprise, for example,gallium arsenide, gallium phosphide, alloys thereof, silicon carbideand/or sapphire. Continued developments in LEDs have resulted in highlyefficient and mechanically robust light sources that can cover thevisible spectrum and beyond. These attributes, coupled with thepotentially long service life of solid state devices, may enable avariety of new display applications, and may place LEDs in a position tocompete with the well entrenched incandescent lamp.

Group III nitride based LEDs, for example, may be fabricated on growthsubstrates (such as a silicon carbide substrates) to provide horizontaldevices (with both electrical contacts on a same side of the LED) orvertical devices (with electrical contacts on opposite sides of theLED). Moreover, the growth substrate may be maintained on the LED afterfabrication or removed (e.g., by etching, grinding, polishing, etc.).The growth substrate may be removed, for example, to reduce a thicknessof the resulting LED and/or to reduce a forward voltage through avertical LED. A horizontal device (with or without the growthsubstrate), for example, may be flip chip bonded (e.g., using solder) toa carrier substrate or printed circuit board, or wire bonded. A verticaldevice (without or without the growth substrate) may have a firstterminal solder bonded to a carrier substrate or printed circuit boardand a second terminal wire bonded to the carrier substrate or printedcircuit board.

One difficulty in fabricating Group III nitride based LEDs on siliconcarbide substrates has been the fabrication of high quality and lowresistance epitaxial layers for LEDs. A gallium nitride layer (or otherGroup III nitride layer), for example, may be doped with an n-typedopant such as silicon to increase majority carrier concentrationthereof and thereby reduce a forward voltage through a resulting LED.Doping with silicon, however, may increase lattice mismatch between thesilicon doped gallium nitride layer and the silicon carbide growthsubstrate thereby increasing cracks in the gallium nitride layer (orother Group III nitride layer) and/or in epitaxial layers formedthereon. Reduced crystal quality due to increased silicon doping mayincrease forward voltage drop of the resulting LED and/or otherwisereduce performance. In other words, silicon doping provided to reduceresistance may reduce crystal quality (due to increased cracking)thereby reducing performance.

Accordingly, there continues to exist a need in the art to provideimproved epitaxial Group III nitride layers for semiconductor devicessuch as LEDs, for example, by reducing forward voltage while maintainingand/or improving crystal quality.

SUMMARY

According to some embodiments of the present invention, a semiconductordevice may include a doped semiconductor region with a dopantconcentration of the doped semiconductor region being modulated over aplurality of intervals. Each interval may include at least one portionhaving a relatively low dopant concentration and at least one portionhaving a relatively high dopant concentration that is significantlygreater than the relatively low dopant concentration. By way of example,different intervals of the modulation may have the same or differentthicknesses, and/or the doped semiconductor region may be a doped GroupIII nitride semiconductor region.

According to other embodiments of the present invention, a method offorming a semiconductor device may include forming a doped semiconductorregion. A dopant concentration of the doped semiconductor region may bemodulated over a plurality of intervals. Each interval may include atleast one portion having a relatively low dopant concentration and atleast one portion having a relatively high dopant concentration that issignificantly greater than the relatively low dopant concentration. Byway of example, different intervals of the modulation may have the sameor different thicknesses, and/or the doped semiconductor region may be adoped Group III nitride semiconductor region.

According to some embodiments of the present invention, a Group IIInitride semiconductor device may include a doped Group III nitridesemiconductor region wherein a dopant concentration of the Group IIInitride semiconductor region is modulated, and a semiconductor activeregion on the doped Group III nitride semiconductor region. The dopedGroup III nitride semiconductor region may include a silicon doped GroupIII nitride semiconductor region, and a dopant concentration of siliconmay be modulated in the Group III nitride semiconductor region.Moreover, the semiconductor active region may be configured to generatelight responsive to an electrical signal therethrough.

The Group III nitride semiconductor region may include a Group IIInitride superlattice, and a pattern of the modulated dopantconcentration may be provided through the superlattice. Moreover, aperiod of the modulated dopant concentration may be greater than aperiod of the superlattice. The superlattice may include a superlatticepattern of alternating layers having different concentrations of indium.

The Group III nitride semiconductor region may include a GaN layer, anda pattern of the modulated dopant concentration may be provided throughthe GaN layer. The Group III nitride semiconductor region may alsoinclude a Group III nitride superlattice between the GaN layer and theactive region.

The modulated dopant concentration may define a repeating pattern ofdifferent dopant concentrations with a highest dopant concentration ofthe repeating pattern being at least 50 percent greater than a lowestdopant concentration of the repeating pattern. A silicon carbidesubstrate may also be provided on the doped Group III nitridesemiconductor region so that the doped Group III nitride semiconductorregion is between the silicon carbide substrate and the semiconductoractive region, and/or the semiconductor active region may include aquantum well structure. In addition, a semiconductor contact layer maybe provided on the semiconductor active region so that the semiconductoractive region is between the semiconductor contact layer and the GroupIII nitride semiconductor region, and the semiconductor contact layerand the doped Group III nitride semiconductor region may have oppositeconductivity types.

According to other embodiments of the present invention, a method offorming a Group III nitride semiconductor device may include forming adoped Group III nitride semiconductor region with a dopant concentrationof the Group III nitride semiconductor region being modulated, andforming a semiconductor active region on the doped Group III nitridesemiconductor region. The doped Group III nitride semiconductor regionmay include a silicon doped Group III nitride semiconductor region, anda dopant concentration of silicon may be modulated in the Group IIInitride semiconductor region. Moreover, the semiconductor active regionmay be configured to generate light responsive to an electrical signaltherethrough.

The Group III nitride semiconductor region may include a Group IIInitride superlattice, and a pattern of the modulated dopantconcentration may be provided through the superlattice. A period of themodulated dopant concentration is greater than a period of thesuperlattice. The superlattice may include a superlattice pattern ofalternating layers having different concentrations of indium. The GroupIII nitride semiconductor region may include a GaN layer, and a patternof the modulated dopant concentration may be provided through the GaNlayer. The Group III nitride semiconductor region may include a GroupIII nitride superlattice between the GaN layer and the active region.

The modulated dopant concentration may define a repeating pattern ofdifferent dopant concentrations with a highest dopant concentration ofthe repeating pattern being at least 50 percent greater than a lowestdopant concentration of the repeating pattern.

Forming the doped Group III nitride semiconductor region may includeforming the doped Group III nitride semiconductor region on a siliconcarbide substrate so that the doped Group III nitride semiconductorregion is between the silicon carbide substrate and the semiconductoractive region. For example, each of the doped Group III nitridesemiconductor region and the semiconductor active region may be formedby epitaxial deposition on a substantially single crystal siliconcarbide substrate so that crystal structures thereof are matched.

The semiconductor active region may include a quantum well structure. Inaddition, a semiconductor contact layer may be formed on thesemiconductor active region so that the semiconductor active region isbetween the semiconductor contact layer and the Group III nitridesemiconductor region, and the semiconductor contact layer and the dopedGroup III nitride semiconductor region may have opposite conductivitytypes. The semiconductor active region may be configured to generatelight responsive to an electrical signal therethrough.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features of the present invention will be more readily understoodfrom the following detailed description of specific embodiments thereofwhen read in conjunction with the accompanying drawings, in which:

FIG. 1 is a schematic illustration of a Group III nitride light emittingdiode incorporating embodiments of the present invention;

FIG. 2 is a schematic illustration of a Group III nitride light emittingdiode incorporating further embodiments of the present invention;

FIG. 3 is a schematic illustration of a quantum well structure and amulti-quantum well structure according to additional embodiments of thepresent invention; and

FIG. 4 is a schematic illustration of a Group III nitride light emittingdiode incorporating further embodiments of the present invention.

FIG. 5 is a schematic illustration of a Group III nitride light emittingdiode including a base layer structure according to still furtherembodiments of the present invention;

FIGS. 6-18 are graphical illustrations of modulated silicon dopantpatterns according to embodiments of the present invention; and

FIG. 19 is a schematic illustration of a base layer structure accordingto additional embodiments of the present invention.

FIG. 20 is a graph illustrating forward voltages (Vf) for differentaverage silicon doping levels of an n-GaN layer in a horizontal LEDdevice according to embodiments of the present invention.

DETAILED DESCRIPTION

The present invention now will be described more fully hereinafter withreference to the accompanying drawings, in which embodiments of theinvention are shown. However, this invention should not be construed aslimited to the embodiments set forth herein. Rather, these embodimentsare provided so that this disclosure will be thorough and complete, andwill fully convey the scope of the invention to those skilled in theart. In the drawings, the thickness of layers and regions areexaggerated for clarity. Like numbers refer to like elements throughout.As used herein the term “and/or” includes any and all combinations ofone or more of the associated listed items.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

It will be understood that when an element such as a layer, region orsubstrate is referred to as being “on” or extending “onto” anotherelement, it can be directly on or extend directly onto the other elementor intervening elements may also be present. In contrast, when anelement is referred to as being “directly on” or extending “directlyonto” another element, there are no intervening elements present. Itwill also be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. It will also be appreciated by those ofskill in the art that references to a structure or feature that isdisposed “adjacent” another feature may have portions that overlap orunderlie the adjacent feature.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, components, regions, layersand/or sections, these elements, components, regions, layers and/orsections should not be limited by these terms. These terms are only usedto distinguish one element, component, region, layer or section fromanother region, layer or section. Thus, a first element, component,region, layer or section discussed below could be termed a secondelement, component, region, layer or section without departing from theteachings of the present invention.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother elements as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in the Figures is turned over, elements describedas being on the “lower” side of other elements would then be oriented on“upper” sides of the other elements. The exemplary term “lower”, cantherefore, encompasses both an orientation of “lower” and “upper,”depending of the particular orientation of the figure. Similarly, if thedevice in one of the figures is turned over, elements described as“below” or “beneath” other elements would then be oriented “above” theother elements. The exemplary terms “below” or “beneath” can, therefore,encompass both an orientation of above and below.

Embodiments of the present invention are described herein with referenceto cross-section illustrations that are schematic illustrations ofidealized embodiments of the present invention. As such, variations fromthe shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,embodiments of the present invention should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, an etched region illustrated or described asa rectangle will, typically, have rounded or curved features. Thus, theregions illustrated in the figures are schematic in nature and theirshapes are not intended to illustrate the precise shape of a region of adevice and are not intended to limit the scope of the present invention.

Some embodiments of the invention are described with reference tosemiconductor layers and/or regions which are characterized as having aconductivity type such as n-type or p-type, which refers to the majoritycarrier concentration in the layer and/or region. Thus, n-type materialhas a majority equilibrium concentration of negatively chargedelectrons, while p-type material has a majority equilibriumconcentration of positively charged holes. Some material may bedesignated with a “⁺” or “⁻” (as in N⁺, N⁻, P+, P⁻, N⁺⁺, N⁻⁻, P⁺⁺, P⁻⁻,or the like), to indicate a relatively larger (“⁺”) or smaller (“⁻”)concentration of majority carriers compared to another layer or region.However, such notation does not imply the existence of a particularconcentration of majority or minority carriers in a layer or region.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

Silicon carbide (SiC) substrates/layers discussed herein may be 4Hpolytype silicon carbide substrates/layers. Other silicon carbidecandidate polytypes, such as 3C, 6H, and 15R polytypes, however, may beused. Appropriate SiC substrates are available from Cree Research, Inc.,of Durham, N.C., the assignee of the present invention, and the methodsfor producing such substrates are set forth in the scientific literatureas well as in a number of commonly assigned U.S. patents, including butnot limited to U.S. Pat. No. Re. 34,861, U.S. Pat. No. 4,946,547, andU.S. Pat. No. 5,200,022, the disclosures of which are incorporatedherein in their entirety by reference.

As used herein, the term “Group III nitride” refers to thosesemiconducting compounds formed between nitrogen and one or moreelements in Group III of the periodic table, usually aluminum (Al),gallium (Ga), and indium (In). The term also refers to binary, ternary,and quaternary compounds such as GaN, AlGaN and AlInGaN. The Group IIIelements can combine with nitrogen to form binary (e.g., GaN), ternary(e.g., AlGaN), and quaternary (e.g., AlInGaN) compounds. These compoundsmay have empirical formulas in which one mole of nitrogen is combinedwith a total of one mole of the Group III elements. Accordingly,formulas such as Al_(x)Ga_(1-x)N where 1>x>0 are often used to describethese compounds. Techniques for epitaxial growth of Group III nitrideshave become reasonably well developed and reported in the appropriatescientific literature, and in commonly assigned U.S. Pat. No. 5,210,051,U.S. Pat. No. 5,393,993, and U.S. Pat. No. 5,523,589, the disclosures ofwhich are hereby incorporated herein in their entirety by reference.

Although various embodiments of LEDs disclosed herein include asubstrate, it will be understood by those skilled in the art that thecrystalline epitaxial growth substrate on which the epitaxial layerscomprising an LED are grown may be removed, and the freestandingepitaxial layers may be mounted on a substitute carrier substrate orsubmount which may have better thermal, electrical, structural and/oroptical characteristics than the original substrate. The inventiondescribed herein is not limited to structures having crystallineepitaxial growth substrates and may be used in connection withstructures in which the epitaxial layers have been removed from theiroriginal growth substrates and bonded to substitute carrier substrates.

Embodiments of the present invention will be described with reference toFIG. 1 that illustrates a light emitting diode (LED) structure 40. TheLED structure 40 of FIG. 1 includes a substrate 10, which may be 4H or6H n-type silicon carbide. Substrate 10 may also comprise sapphire, bulkgallium nitride (GaN), aluminum nitride (AlN), gallium nitride (GaN),silicon (Si), lithium aluminate, zinc oxide (ZnO), glass, diamond,gallium arsenide, or any other suitable substrate. Also included in theLED structure 40 of FIG. 1 is a layered semiconductor structurecomprising gallium nitride-based semiconductor layers on substrate 10.Namely, the LED structure 40 illustrated includes the following layers:a conductive buffer layer 11, a first silicon-doped GaN layer 12, asecond silicon doped GaN layer 14, a superlattice 16 comprisingalternating layers of silicon-doped GaN and/or InGaN, an active region18, which may be provided by a multi-quantum well structure, an undopedGaN and/or AlGaN layer 22, an AlGaN layer 30 doped with a p-typeimpurity, and a GaN contact layer 32, also doped with a p-type impurity.The structure further includes an n-type ohmic contact 23 on thesubstrate 10 and a p-type ohmic contact 24 on the contact layer 32.

Buffer layer 11 may be n-type AlGaN. Examples of buffer layers betweensilicon carbide and Group III-nitride materials are provided in U.S.Pat. Nos. 5,393,993 and 5,523,589 and in U.S. Publication No.2002/0121642 entitled “Vertical Geometry InGaN Light Emitting Diode”,each of which is assigned to the assignee of the present invention, thedisclosures of which are incorporated by reference as if fully set forthherein. Similarly, embodiments of the present invention may also includestructures such as those described in U.S. Pat. No. 6,201,262 entitled“Group III Nitride Photonic Devices on Silicon Carbide Substrates WithConductive Buffer Interlay Structure,” the disclosure of which isincorporated herein by reference as if set forth fully herein.

GaN layer 12 may be between about 500 nm and 7000 nm thick inclusive,and according to some embodiments about 4000 nm thick. GaN layer 12 maybe doped with silicon at a level of about 5×10¹⁷ to 7×10¹⁸ cm⁻³. GaNlayer 14 may be between about 10 and 500 Angstroms thick inclusive, andaccording to some embodiments about 80 Angstroms thick. GaN layer 14 maybe doped with silicon at a level of less than about 5×10¹⁹ cm⁻³.

As illustrated in FIG. 1, a superlattice 16 according to embodiments ofthe present invention includes alternating layers of In_(X)Ga_(1-X)N andIn_(Y)Ga_(1-Y)N, wherein X is between 0 and 1 inclusive and X is notequal to Y. For example, X=0 and the thickness of each of thealternating layers of InGaN is about 5 Angstroms to about 40 Angstromsthick inclusive, and the thickness of each of the alternating layers ofGaN is about 5 Angstroms to about 100 Angstroms thick inclusive. Incertain embodiments, the GaN layers are about 30 Angstroms thick and theInGaN layers are about 15 Angstroms thick. Superlattice 16 may includefrom about 5 to about 50 periods (where one period equals one repetitioneach of the In_(X)Ga_(1-X)N and In_(Y)Ga_(1-Y)N layers that comprise thesuperlattice). In one embodiment, superlattice 16 comprises 25 periods.In another embodiment, superlattice 16 comprises 10 periods. The numberof periods, however, may be decreased by, for example, increasing thethickness of the respective layers. Thus, for example, doubling thethickness of the layers may be used with half the number of periods.Alternatively, the number and thickness of the periods may beindependent of one another.

Superlattice 16 may be doped with an n-type impurity such as silicon ata level of from about 1×10¹⁷ cm⁻³ to about 5×10¹⁹ cm⁻³. Such a dopantconcentration may be an actual dopant concentration or average dopantconcentration of the layers of superlattice 16. If such dopantconcentration is an average dopant concentration, then it may bebeneficial to provide doped layers adjacent to superlattice 16 thatprovide the desired average dopant concentration where doping of theadjacent layers is averaged over the adjacent layers and superlattice16. By providing superlattice 16 between substrate 10 and active region18, a better surface may be provided on which to grow InGaN-based activeregion 18. While not wishing to be bound by any theory of operation, theinventors believe that strain effects in superlattice 16 provide agrowth surface that is conducive to the growth of a high-qualityInGaN-containing active region. Further, the superlattice is known toinfluence the operating voltage of the device. Appropriate choice ofsuperlattice thickness and composition parameters can reduce operatingvoltage and increase optical efficiency.

Superlattice 16 may be grown in an atmosphere of nitrogen or other gas,which enables growth of higher-quality InGaN layers in the structure. Bygrowing a silicon-doped InGaN/GaN superlattice on a silicon-doped GaNlayer in a nitrogen atmosphere, a structure having improvedcrystallinity and conductivity with optimized strain may be realized.

In some embodiments of the present invention, the active region 18 maycomprise a single or multi-quantum well structure as well as single ordouble heterojunction active regions. In some embodiments of the presentinvention, the active region 18 comprises a multi-quantum well structurethat includes multiple InGaN quantum well layers separated by barrierlayers (not shown in FIG. 1).

Layer 22 is provided on active region 18 and may be undoped GaN or AlGaNbetween about 0 and 250 Angstroms thick inclusive. As used herein, anundoped layer/region refers to a not intentionally doped layer/region.Layer 22 may be about 35 Angstroms thick. If layer 22 comprises AlGaN,the aluminum percentage in such layer may be about 10 percent to about30 percent, and according to some embodiments, the aluminum percentagemay be about 24 percent. The level of aluminum in layer 22 may also begraded in a stepwise or continuously decreasing fashion. Layer 22 may begrown at a higher temperature than the growth temperatures in quantumwell region 25 in order to improve the crystal quality of layer 22.Additional layers of undoped GaN or AlGaN may be included in thevicinity of layer 22. For example, LED 1 may include an additional layerof undoped AlGaN about 6 Angstroms to about 9 Angstroms thick betweenthe active region 18 and the layer 22.

An AlGaN layer 30 doped with a p-type impurity such as magnesium isprovided on layer 22. The AlGaN layer 30 may be between about 0 and 300Angstroms thick inclusive, and according to some embodiments, the AlGaNlayer 30 may be about 150 Angstroms thick. A contact layer 32 of p-typeGaN is provided on the layer 30 and may be about 1800 Angstroms thick.Ohmic contacts 24 and 25 are provided on the p-GaN contact layer 32 andthe substrate 10, respectively.

FIG. 2 illustrates further embodiments of the present inventionincorporating a multi-quantum well active region. Embodiments of thepresent invention illustrated in FIG. 2 include a layered semiconductorstructure 100 comprising gallium nitride-based semiconductor layersgrown on a substrate 10. As described above, the substrate 10 may besilicon carbide (SiC), sapphire, bulk gallium nitride (GaN), aluminumnitride (AlN), gallium nitride (GaN), silicon (Si), lithium gallate(LiGaO₂ or LGO), lithium aluminate (LiAlO₂), zinc oxide (ZnO), galliumarsenide (GaAs), indium phosphide (InP), glass, diamond, or any othersuitable substrate.

As is illustrated in FIG. 2, LEDs according to some embodiments of thepresent invention may include a conductive buffer layer 11, a firstsilicon-doped GaN layer 12, a second silicon doped GaN layer 14, asuperlattice 16 comprising alternating layers of silicon-doped GaNand/or InGaN, an active region 125 comprising a multi-quantum wellstructure, an undoped GaN or AlGaN layer 22, an AlGaN layer 30 dopedwith a p-type impurity, and a GaN contact layer 32, also doped with ap-type impurity. The LEDs may further include an n-type ohmic contact 23on the substrate 10 and a p-type ohmic contact 24 on the contact layer32. In embodiments of the present invention where the substrate 10 issapphire or another insulating, semi-insulating, or resistive substrate,the n-type ohmic contact 23 would be provided on n-type GaN layer 12and/or n-type GaN layer 14.

As described above with reference to FIG. 1, buffer layer 11 may ben-type AlGaN. Similarly, GaN layer 12 may be between about 500 nm and7000 nm thick inclusive, and according to some embodiments, GaN layermay be about 4000 nm thick. GaN layer 12 may be doped with silicon at alevel of about 5×10¹⁷ to 7×10¹⁸ cm⁻³. GaN layer 14 may be between about10 Angstroms and 500 Angstroms thick inclusive, and according to someembodiments, GaN layer 14 may be about 80 Angstroms thick. GaN layer 14may be doped with silicon at a level of less than about 5×10¹⁹ cm⁻³.Superlattice 16 may also be provided as described above with referenceto FIG. 1.

The active region 125 comprises a multi-quantum well structure thatincludes multiple InGaN quantum well layers 120 separated by barrierlayers 118. The barrier layers 118 comprise In_(X)Ga_(1-X)N where 0≦X<1.An indium composition of the barrier layers 118 may be less than that ofthe quantum well layers 120, so that the barrier layers 118 have ahigher bandgap than quantum well layers 120. The barrier layers 118 andquantum well layers 120 may be undoped (i.e. not intentionally dopedwith an impurity atom such as silicon or magnesium). However, it may bedesirable to dope the barrier layers 118 with Si at a level of less than5×10¹⁹ cm⁻³, for example, if ultraviolet emission is desired.

In further embodiments of the present invention, the barrier layers 118comprise Al_(X)In_(Y)Ga_(1-X-Y)N where 0<X<1, 0≦Y<1 and X+Y≦1. Byincluding aluminum in the crystal of the barrier layers 118, the barrierlayers 118 may be lattice-matched to the quantum well layers 120,thereby providing improved crystalline quality in the quantum welllayers 120, which may increase the luminescent efficiency of the device.

Referring to FIG. 3, embodiments of the present invention that provide amulti-quantum well structure of a gallium nitride based device areillustrated. The multi-quantum well structure illustrated in FIG. 3 mayprovide the active region of the LEDs illustrated in FIG. 1 and/or FIG.2. As seen in FIG. 3, an active region 225 comprises a periodicallyrepeating structure 221 comprising a well support layer 218 a havinghigh crystal quality, a quantum well layer 220 and a cap layer 218 bthat serves as a protective cap layer for the quantum well layer 220.When the structure 221 is grown, the cap layer 218 b and the wellsupport layer 218 a together form the barrier layer between adjacentquantum wells 220. The high quality well support layer 218 a may begrown at a higher temperature than that used to grow the InGaN quantumwell layer 220. In some embodiments of the present invention, the wellsupport layer 218 a is grown at a slower growth rate than the cap layer218 b. In other embodiments, lower growth rates may be used during thelower temperature growth process and higher growth rates used during thehigher temperature growth process. For example, in order to achieve ahigh quality surface for growing the InGaN quantum well layer 220, thewell support layer 218 a may be grown at a growth temperature of betweenabout 700 and 900° C. Then, the temperature of the growth chamber islowered by from about 0 to about 200° C. to permit growth of thehigh-quality InGaN quantum well layer 220. Then, while the temperatureis kept at the lower InGaN growth temperature, the cap layer 218 b isgrown. In that manner, a multi-quantum well region comprising highquality InGaN layers may be fabricated. For example, to provide a highquality surface for growing InGaN quantum well 220, well support layer218 a may be grown at a growth temperature in the range of about 750degrees C. to about 900 degrees C. Then the temperature of the growthchamber may be lowered by about 50 degrees C. to permit growth of ahigh-quality InGaN quantum well layer. Then, while the temperature iskept at the lower InGaN growth temperature, the cap layer is grown.

Active regions 125 and 225 of FIGS. 2 and 3 may be grown in a nitrogenatmosphere, which may provide increased InGaN crystal quality. Barrierlayers 118, the well support layers 218 a and/or the cap layers 218 bmay be between about 50 Angstroms and 400 Angstroms thick inclusive. Thecombined thickness of corresponding ones of the well support layers 218a and the cap layers 218 b may be from about 50 Angstroms to about 400Angstroms thick inclusive. The barrier layers 118, the well supportlayers 218 a, and/or the cap layers 218 b may be greater than about 75Angstroms thick, and according to some embodiments, greater than about100 Angstroms thick, greater than about 150 Angstroms thick, or evengreater than about 200 Angstroms thick. Also, that the well supportlayers 218 a may be thicker than the cap layers 218 b. Thus, the caplayers 218 b may be as thin as possible while still reducing thedesorption of Indium from or the degradation of the quantum well layers220. The quantum well layers 120 and 220 may be between about 10Angstroms and about 50 Angstroms thick inclusive. The quantum welllayers 120 and 220 may be greater than 20 Angstroms thick, and accordingto some embodiments, quantum well layers 120 and 220 may be about 25Angstroms thick. The thickness and percentage of indium in the quantumwell layers 120 and 220 may be varied to produce light having a desiredwavelength. Typically, the percentage of indium in quantum well layers120 and 220 is about 25 percent to about 30 percent, however, dependingon the desired wavelength, the percentage of indium has been varied fromabout 5 percent to about 50 percent.

In some embodiments of the present invention, the bandgap ofsuperlattice 16 exceeds the bandgap of the quantum well layers 120. Thismay be achieved by adjusting the average percentage of indium insuperlattice 16. The thickness (or period) of the superlattice layersand the average Indium percentage of the layers may be chosen such thatthe bandgap of superlattice 16 is greater than the bandgap of thequantum wells 120. By keeping the bandgap of superlattice 16 higher thanthe bandgap of the quantum wells 120, unwanted absorption in the devicemay be reduced and luminescent emission may be increased. The bandgap ofsuperlattice 16 may be from about 2.95 eV to about 3.35 eV. In someembodiments, the bandgap of superlattice 16 is about 3.15 eV.

In additional embodiments of the present invention, the LED structureillustrated in FIG. 2 includes a spacer layer 17 disposed betweensuperlattice 16 and the active region 125. The spacer layer 17 maycomprise undoped GaN. The presence of the optional spacer layer 17between the doped superlattice 16 and active region 125 may detersilicon impurities from becoming incorporated into the active region125. This, in turn, may improve the material quality of the activeregion 125 that provides more consistent device performance and betteruniformity. Similarly, a spacer layer may also be provided in the LEDstructure illustrated in FIG. 1 between superlattice 16 and the activeregion 18.

Returning to FIG. 2, the layer 22 may be provided on the active region125 and layer 22 may be undoped GaN or AlGaN between about 0 and 250Angstroms thick inclusive. According to some embodiments, the layer 22may be about 35 Angstroms thick. If the layer 22 comprises AlGaN, thealuminum percentage in such layer may be about 10 percent to about 30percent, and according to some embodiments, the aluminum percentage maybe about 24 percent. The level of aluminum in the layer 22 may also begraded in a stepwise or continuously decreasing fashion. The layer 22may be grown at a higher temperature than the growth temperatures in theactive region 125 in order to improve the crystal quality of the layer22. Additional layers of undoped GaN or AlGaN may be included in thevicinity of layer 22. For example, the LED illustrated in FIG. 2 mayinclude an additional layer of undoped AlGaN about 6 Angstroms to about9 Angstroms thick between the active regions 125 and the layer 22.

An AlGaN layer 30 doped with a p-type impurity such as magnesium isprovided on layer 22. The AlGaN layer 30 may be between about 0 and 300Angstroms thick inclusive, and according to some embodiments, AlGaNlayer 30 may be about 150 Angstroms thick. A contact layer 32 of p-typeGaN is provided on the layer 30 and may be about 1800 Angstroms thick.Ohmic contacts 24 and 25 are provided on the p-GaN contact layer 32 andthe substrate 10, respectively. Ohmic contacts 24 and 25 are provided onthe p-GaN contact layer 32 and the substrate 10, respectively.

FIG. 4 illustrates further embodiments of the present inventionincorporating a Group III-nitride layer incorporating Indium on theactive region of the device. For example, an InAlGaN cap structure maybe provided. Embodiments of the present invention illustrated in FIG. 4include a layered semiconductor structure 400 comprising galliumnitride-based semiconductor layers grown on a substrate 10. As describedabove, the substrate 10 may be silicon carbide (SiC), sapphire, bulkgallium nitride (GaN), aluminum nitride (AN), gallium nitride (GaN),silicon (Si), lithium aluminate, zinc oxide (ZnO), glass, diamond,gallium arsenide, or any other suitable substrate. In some embodimentsof the present invention, the substrate 10 is a SiC substrate having athickness of from about 50 to about 1500 μm (micrometers) and in someembodiments, a thickness of about 100 μm (micrometers).

As is illustrated in FIG. 4, LEDs according to some embodiments of thepresent invention may include a conductive buffer layer 11, a firstsilicon-doped GaN layer 12, a second silicon doped GaN layer 14, asuperlattice 16 comprising alternating layers of silicon-doped GaNand/or InGaN, an active region 125 comprising a multi-quantum wellstructure, an undoped AlInGaN layer 40, an AlGaN layer 30 doped with ap-type impurity, and a GaN contact layer 32, also doped with a p-typeimpurity. The LEDs may further include an n-type ohmic contact 23 on thesubstrate 10 and a p-type ohmic contact 24 on the contact layer 32. Inembodiments of the present invention where the substrate 10 is sapphire,the n-type ohmic contact 23 would be provided on n-type GaN layer 12and/or n-type GaN layer 14.

As described above with reference to FIGS. 1 and 2, the buffer layer 11may be n-type AlGaN. For example, the buffer layer 11 may be AlGaN dopedwith Si and having a thickness of from about 100 Angstroms to about10,000 Angstroms. In certain embodiments the thickness is about 1500Angstroms. The GaN layer 12 may be doped with Si and may have athickness of from about 5000 Angstroms to 50,000 Angstroms thickinclusive and, in some embodiments, is about 18,000 Angstroms thick. TheGaN layer 12 may be doped with silicon at a level of about 5×10¹⁷ to7×10¹⁸ cm⁻³. Superlattice 16 may also be provided as described abovewith reference to FIG. 1. For example, superlattice 16 may have from 3to 35 periods of InGaN/GaN. The thickness of the periods may be fromabout 30 Angstroms to about 100 Angstroms. In some embodiments of thepresent invention, twenty five (25) periods of InGaN/GaN are providedwith the thickness of a period of layers being about 70 Angstroms andthe thickness of the GaN or InGaN layer being about 15 Angstroms withthe other layer making up the remainder.

The active region 325 may include a multi-quantum well structure thatincludes multiple InGaN quantum well layers 320 separated by barrierlayers 318. The barrier layers 318 comprise In_(X)Ga_(1-X)N where 0≦X<1.The indium composition of the barrier layers 318 may be less than thatof the quantum well layers 320, so that the barrier layers 318 have ahigher bandgap than quantum well layers 320. The barrier layers 318 andquantum well layers 320 may be undoped (i.e. not intentionally dopedwith an impurity atom such as silicon or magnesium). However, it may bedesirable to dope the barrier layers 318 with Si at a level of less than5×10¹⁹ cm⁻³, for example, if ultraviolet emission is desired.

In further embodiments of the present invention, the barrier layers 318comprise Al_(X)In_(Y)Ga_(1-X-Y)N where 0<X<1, 0≦Y<1 and X+Y≦1. Byincluding aluminum in the crystal of the barrier layers 318, the barrierlayers 318 may be lattice-matched to the quantum well layers 320,thereby allowing improved crystalline quality in the quantum well layers320, which can increase the luminescent efficiency of the device.

The active region 325 may also be provided as illustrated in FIG. 3 anddescribed above with reference to FIGS. 1 through 3. In some embodimentsof the present invention, the active region 325 includes 3 or morequantum wells and in certain embodiments, eight (8) quantum wells areprovided. The thickness of the quantum well structures may be from about30 Angstroms to about 250 Angstroms. In some embodiments of the presentinvention, the thickness of a quantum well structure may be about 120Angstroms with the thickness of the well layer being about 25 Angstroms.

The LED structure illustrated in FIG. 4 may also include a spacer layerdisposed between superlattice 16 and the active region 325 as describedabove.

Returning to FIG. 4, a Group III-nitride capping layer 40 that includesIndium may be provided on the active region 325 and, more specifically,on the quantum well 320 of the active region 325. The Group III-nitridecapping layer 40 may include InAlGaN between about 10 Angstroms and 320Angstroms thick inclusive. The capping layer 40 may be of uniformcomposition, multiple layers of different compositions and/or gradedcomposition. In some embodiments of the present invention, the cappinglayer 40 includes a first capping layer having a composition ofIn_(x)Al_(y)Ga_(1-x-y)N, where 0<x≦0.2 and 0≦y≦0.4 and having athickness of from about 10 Angstroms to about 200 Angstroms and a secondcapping layer having a composition of In_(w)Al_(z)Ga_(1-w-z)N, where0<w≦0.2 and y≦z<1 and having a thickness of from about 10 Angstroms toabout 120 Angstroms. In certain embodiments of the present invention,the first capping layer has a thickness of about 80 Angstroms, x=0.1 andy=0.25 and the second capping layer has a thickness of about 30Angstroms, w=0.05 and z=0.55. The capping layer 40 may be grown at ahigher temperature than the growth temperatures in the active region 325in order to improve the crystal quality of the layer 40. Additionallayers of undoped GaN or AlGaN may be included in the vicinity of layer40. For example, a thin layer of GaN may be provided between a lastquantum well layer and the capping layer 40. The capping layer 40 thatincludes indium may be more closely lattice matched to the quantum wellsof the active region 325 and may provide a transition from the latticestructure of the active region 325 to the lattice structure of thep-type layers. Such a structure may result in increased brightness ofthe device.

An AlGaN hole injection layer 42 doped with a p-type impurity such asmagnesium is provided on the capping layer 40. The AlGaN layer 42 may bebetween about 50 Angstroms and 2500 Angstroms thick inclusive and, insome embodiments, is about 150 Angstroms thick. The AlGaN layer 42 maybe of the composition of Al_(x)Ga_(1-x)N, where 0≦x≦0.4. In someembodiments of the present invention, x=0.23 for the AlGaN layer 42. TheAlGaN layer 42 may be doped with Mg. In some embodiments of the presentinvention, the layer 42 may also include Indium.

A contact layer 32 of p-type GaN is provided on the layer 42 and may befrom about 250 Angstroms to abut 10,000 Angstroms thick and in someembodiments, about 1500 Angstroms thick. In some embodiments, thecontact layer 32 may also include Indium. Ohmic contacts 24 and 25 areprovided on the p-GaN contact layer 32 and the substrate 10,respectively. Ohmic contacts 24 and 25 are provided on the p-GaN contactlayer 32 and the substrate 10, respectively.

In some embodiments of the present invention, the indium containingcapping layer 40 may be provided in light emitting devices as described,for example, in United States Provisional Patent Application Serial No.2006/0046328 entitled “ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDELIGHT EMITTING DEVICES AND METHODS OF FORMING”, U.S. Pat. No. 7,557,380entitled “LIGHT EMITTING DEVICES HAVING A REFLECTIVE BOND PAD ANDMETHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING REFLECTIVE BONDPADS”, U.S. Pat. No. 6,664,560, United States Patent Publication No.2006/0002442 entitled “LIGHT EMITTING DEVICES HAVING CURRENT BLOCKINGSTRUCTURES AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVINGCURRENT BLOCKING STRUCTURES”, U.S. Patent Publication No. 2002/0123164entitled “LIGHT EMITTING DIODES INCLUDING SUBSTRATE MODIFICATIONS FORLIGHT EXTRACTION AND MANUFACTURING METHODS THEREFOR” and/or in U.S.Patent Publication No. 2003/0168663 entitled “ REFLECTIVE OHMIC CONTACTSFOR SILICON CARBIDE INCLUDING A LAYER CONSISTING ESSENTIALLY OF NICKEL,METHODS OF FABRICATING SAME, AND LIGHT EMITTING DEVICES INCLUDING THESAME,” the disclosures of which are incorporated herein as if set forthin their entirety.

While embodiments of the present invention have been described withmultiple quantum wells, the benefits from the teachings of the presentinvention may also be achieved in single quantum well structures. Thus,for example, a light emitting diode may be provided with a singleoccurrence of the structure 221 of FIG. 3 as the active region of thedevice. Thus, while different numbers of quantum wells may be usedaccording to embodiments of the present invention, the number of quantumwells will typically range from 1 to 10 quantum wells.

LED structures discussed above with respect to FIGS. 1-4 are alsodiscussed in U.S. Pat. No. 6,958,497 entitled “Group III Nitride BasedLight Emitting Diode Structures With A Quantum Well And Superlattice,Group III Nitride Based Quantum Well Structures And Group III NitrideBased Superlattice Structures” and U.S. Patent Publication No.2005/0056824 entitled “Group III Nitride Based Quantum Well LightEmitting Device Structures With An Indium Containing Capping Structure”,both assigned to Cree, Inc., the assignee of the present application.The disclosures of both of the above referenced U.S. patent documentsare hereby incorporated herein in their entirety by reference.

According to additional embodiments of the present invention, a GroupIII nitride based light emitting diode 50 may include a Group IIInitride semiconductor base region 501 with modulated silicon doping andan active region 503, as shown in FIG. 5. LED 50, for example, mayinclude an n-type silicon carbide substrate 10, a conductive bufferlayer 11, an undoped layer 22, a p-type AlGaN layer 30, a p-GaN contactlayer 32, and ohmic contacts 23 and 24, as discussed above with regardto FIG. 1. P—GaN contact layer 32, for example, may be grown usingammonia as a source gas together with a carrier gas(es) such as hydrogen(H₂), nitrogen (N₂), an inert gas(es), and/or mixtures thereof.Moreover, P—GaN layer 32 may be subjected to a post deposition anneal ata temperature of at least about 750 degrees C. in an atmosphereincluding nitrogen (N₂), an inert gas(es), oxygen (O₂), and/or mixturesthereof.

Moreover, active region 503 may be provided as discussed above withrespect to active region 18 of FIG. 1, with respect to active region 125of FIG. 2, with respect to active region 225 of FIG. 3, and/or withrespect to active region 325 of FIG. 4. In addition, a spacer layer maybe provided between active region 503 and base region 501 as discussedabove with respect to spacer layer 17 of FIG. 2, and/or a capping layermay be provided in addition to or instead of undoped layer 22 asdiscussed above with respect to capping layer 40 of FIG. 4.

The barrier layers and/or quantum well layers of active region 503 maybe undoped (i.e. not intentionally doped with an impurity atom such assilicon or magnesium). A multi-quantum well structure of active region503 may thus be free of modulated silicon doping.

Group III nitride semiconductor base region 501 or layers may include aGaN layer or layers and/or a superlattice as discussed above withrespect to GaN layer 12 and/or superlattice 16 of FIGS. 1, 2, and 4. Inaddition, base region 501 may include a second (relatively thin) n-GaNlayer as discussed above with respect to n-GaN layer 14 of FIGS. 1 and2, and/or base region 501 may include additional layers of other GroupIII nitride semiconductor materials such as AlGaN, InGaN, AlInGaN,InGaN, InN, AlN, etc. Moreover, Group III nitride semiconductor baseregion 501 may include modulated silicon doping through a portion orportions thereof, or throughout an entire thickness thereof.

According to some embodiments of the present invention, a dopantconcentration of at least a portion of base region 501 layer may bemodulated over a plurality of intervals with each interval including atleast one portion having a relatively low dopant concentration and atleast one portion having a relatively high dopant concentration that issignificantly greater than the relatively low dopant concentration. Forexample, first and second adjacent intervals of modulated dopantconcentration may be provided. A first portion of the first interval mayhave a first relatively low dopant concentration and a second portion ofthe first interval may have a first relatively high dopantconcentration. A first portion of the second interval may have a secondrelatively low dopant concentration and a second portion of the secondinterval may have a second relatively high dopant concentration. Thefirst relatively high dopant concentration may be greater than the firstand second relatively low dopant concentrations, and the secondrelatively low dopant concentration may be less than the first andsecond relatively high dopant concentrations. Moreover, the secondportion of the first interval may be between the first portions of thefirst and second intervals, and the first portion of the second intervalmay be between the second portions of the first and second intervals.According to some embodiments, the first and second relatively highdopant concentrations may be different, and/or the first and secondrelatively low dopant concentrations may be different. According toother embodiments, the first and second relatively high dopantconcentrations may be the same, and/or the first and second relativelylow dopant concentrations may be the same. Moreover, different intervalsof the modulation may have the same or different thicknesses.

According to some embodiments, modulated silicon doping may becharacterized by a repeating pattern of different silicon dopantconcentrations, and a period of the modulated silicon doping may bedefined as a thickness defining a smallest unit of the pattern. With arepeating pattern, for example, an interval as defined above may definea period of the pattern. Modulated silicon doping according to someembodiments of the present invention, for example, may have a period inthe range of at least about 50 Angstroms or at least about 100Angstroms. By way of example, a period of modulated silicon doping mayby in the range of about 50 Angstroms to about 5000 Angstroms, or in therange of about 100 Angstroms to about 2500 Angstroms. While periodicand/or repeating patterns are discussed herein by way of example,modulation doping according to some embodiments of the present inventiondoes not require either repetition or periodicity.

By way of example, alternating layers of two different silicon dopantconcentrations may define a modulated silicon doping pattern for baseregion 501, and a combined thickness of two such adjacent layers maydefine a period of the modulated silicon doping pattern. Each layer ofthe pattern may have a thickness of less than about 1 micrometer andgreater than about 50 Angstroms, and according to some embodiments, lessthan about 2000 Angstroms, less than about 1500 Angstroms, less thanabout 1000 Angstroms, or even less than about 500 Angstroms. Accordingto some embodiments of the present invention, each layer of the patternmay have a thickness in the range of about 50 Angstroms to about 5000Angstroms, in the range of about 100 Angstroms to about 2500 Angstroms,or in the range of about 500 Angstroms to about 800 Angstroms. FIG. 6 isa graph illustrating silicon dopant concentrations for a bilayermodulated silicon doping pattern through base region 501 between bufferlayer 11 and active region 503 according to some embodiments of thepresent invention.

While a square pattern (or step function) is shown by way of example, amore gradual gradient may occur between layers of relatively high andlow silicon dopant concentration due to intentional and/or unintentionalgrading during deposition and/or due to subsequent diffusion. By way ofexample, each layer of low dopant concentration may have a thickness ofabout 700 Angstroms (grown while maintaining a low flow rate of asilicon source gas such as silane/SiH₄), and each layer of high dopantconcentration may have a thickness of about 700 Angstroms (grown whilemaintaining a high flow rate of a silicon source gas such assilane/SiH₄). Moreover, a 50 Angstrom graded transition layer may beprovided at each transition from a layer of low dopant concentration toa layer of high dopant concentration by ramping (linearly increasing)the silicon source gas (e.g., silane/SiH₄) flow from the low flow rate(used to grow the layer of low dopant concentration) to the high flowrate (used to grow the layer of high dopant concentration). In addition,a 50 Angstrom graded transition layer may be provided at each transitionfrom a layer of high dopant concentration to a layer of low dopantconcentration by ramping (linearly decreasing) the silicon source gas(e.g., silane/SiH₄) flow from the high flow rate (used to grow the layerof high dopant concentration) to the low flow rate (used to grow thelayer of low dopant concentration). Adjacent layers of relatively highand low silicon dopant concentration (each about 700 Angstroms thick)may thus be separated by a graded transition layer (about 50 Angstromsthick) to provide a period of about 1500 Angstroms.

According to some embodiments, layers of relatively high silicon dopantconcentration of FIG. 6 may have a silicon dopant concentration that isat least about 1.5 times (50 percent) greater than layers of relativelylow silicon dopant concentration, and according to some embodiments, atleast about 2 times (100 percent) greater, at least about 3 times (200percent) greater, at least about 10 times (one order of magnitude)greater, at least about 100 times (two orders of magnitude) greater, atleast about 1,000 times (three orders of magnitude) greater, or even atleast about 10,000 times (four orders of magnitude) greater. Moreover,layers of different silicon dopant concentrations may have approximatelythe same thicknesses. For example, layers of relatively low silicondopant concentration may have a thickness of about 500 Angstroms and asilicon dopant concentration in the range of nominally undoped up toabout 7×10¹⁸ cm⁻³, and according to some embodiments, in the range of atleast about 1×10¹⁷ cm⁻³ to about 7×10¹⁸ cm⁻³, or in the range of about4×10¹⁸ cm⁻³ to about 6×10¹⁸ cm⁻³. Layers of relatively high silicondopant concentration may have a thickness of about 500 Angstroms and asilicon dopant concentration in the range of about 8×10¹⁸ cm⁻³ to about1×10²² cm⁻³, and according to some embodiments, in the range of about8×10¹⁸ cm⁻³ to about 2×10¹⁹ cm⁻³. According to some embodiments of thepresent invention, layers of relatively low silicon dopant concentrationmay have a dopant concentration of about 6×10¹⁸ cm⁻³, and layers ofrelatively high silicon dopant concentration may have a dopantconcentration of about 1.2×10¹⁹ cm⁻³.

While FIG. 6 shows that layers of relatively high and low silicon dopantconcentration may have approximately the same thicknesses, thicknessesof layers of relatively high and low silicon dopant concentrations maybe significantly different. According to some embodiments of the presentinvention, layers of relatively low silicon dopant concentration may besignificantly thicker than layers of relatively high silicon dopantconcentration. For example, layers of relatively low silicon dopantconcentration may be at least 2 times thicker than layers of relativelyhigh silicon dopant concentration (so that a layer of relatively highsilicon dopant concentration makes up no more that about 33 percent of aperiod), and according to some embodiments, at least 4 times greater (sothat a layer of relatively high silicon dopant concentration makes up nomore that about 20 percent of a period). Moreover, layers of FIG. 6 maydefine a period in the range of at least about 50 Angstroms or at leastabout 100 Angstroms. By way of example, a period of modulated silicondoping may by in the range of about 50 Angstroms to about 5000Angstroms, or in the range of about 100 Angstroms to about 2500Angstroms.

According to other embodiments of the present invention, variations ofsilicon doping through base region 501 may define patterns other thanthe square pattern (or step function) illustrated in FIG. 6. As shown inFIG. 7, modulated silicon doping through base region 501, for example,may define a sinusoidal pattern (sine function) of modulated silicondoping as shown in FIG. 7, or a triangular pattern (triangular function)of modulated silicon doping as shown in FIG. 8. Moreover, embodiments ofthe present invention may be implemented with patterns having more thantwo different silicon dopant concentrations and/or with non-symmetricpatterns. For example, a three step pattern (step function) may beprovided with each period including three layers of different silicondopant concentrations as shown in FIG. 9, and/or a saw tooth pattern(saw tooth function) of silicon dopant concentrations may be provided asshown in FIG. 10.

Additional patterns of silicon doping are illustrated in FIGS. 11-17. Asshown in FIG. 11, modulated silicon doping through base region 501 maybe provided according to a step function with different amplitudes ofhigh and low silicon doping (above and below an average silicon doping)that increase and then decrease symmetrically. As shown in FIG. 12,modulated silicon doping through base region 501 may be providedaccording to a step function with different amplitudes of high and lowsilicon doping (above and below an average silicon doping) that decreaseand then increase symmetrically. As shown in FIG. 13, modulated silicondoping through base region 501 may be provided according to a stepfunction with different amplitudes of high and low silicon doping (aboveand below an average silicon doping) that vary without symmetry and/orwithout a repeating pattern. While thicknesses of the regions/layers ofhigh and low silicon may be the same as shown in FIGS. 11-13, thicknessmay vary according to other embodiments of the present invention. Asshown in FIG. 14, for example, modulated silicon doping through baseregion 501 may be provided according to a step function with differentamplitudes of high and low silicon doping (above and below an averagesilicon doping) and different thickness that vary without symmetryand/or without a repeating pattern.

As shown in FIG. 15, modulated silicon doping through base region 501may be provided according to a graded function with different amplitudesof high and low silicon doping (above and below an average silicondoping) that increase and then decrease symmetrically (analogous to thestep function of FIG. 11). As shown in FIG. 12, modulated silicon dopingthrough base region 501 may be provided according to a graded functionwith different amplitudes of high and low silicon doping (above andbelow an average silicon doping) that decrease and then increasesymmetrically (analogous to the step function of FIG. 12). Modulatedsilicon doping through base layer may also be provided according tograded functions with different amplitudes of high and low silicondoping (above and below an average silicon doping) that vary withoutsymmetry and/or without a repeating pattern with same or differentthicknesses (analogous to the step functions of FIGS. 13 and/or 14).Similarly, sinusoidal functions may be provided with varying amplitudesand/or periods analogous to the step and graded functions of FIGS.11-16.

According to additional embodiments of the present invention, modulatedsilicon doping may combine step and graded functions as shown, forexample, in FIG. 17. As shown, step function portions of modulation maybe symmetric and/or graded function portions of modulation may besymmetric on opposite sides of the step function portion. According toother embodiments, step function portions may be symmetric on oppositesides of a graded function portion. According to other embodiments,graded and/or step functions may be asymmetric.

In each of the patterns of FIGS. 6-17, a highest silicon dopingconcentration of the pattern may be at least about at least about 1.5times (50 percent) greater than a lowest silicon dopant concentration ofthe pattern, and according to some embodiments, at least about 2 times(100 percent) greater, at least about 3 times (200 percent) greater, atleast about 10 times (one order of magnitude) greater, at least about100 times (two orders of magnitude) greater, at least about 1,000 times(three orders of magnitude) greater, or even at least about 10,000 times(four orders of magnitude) greater. For example, a lowest silicon dopantconcentration may be in the range of nominally undoped up to about7×10¹⁸ cm⁻³, and according to some embodiments, in the range of about1×10¹⁷ cm⁻³ to about 7×10¹⁸ cm⁻³ or in the range of about 4×10¹⁸ cm⁻³ toabout 6×10¹⁸ cm⁻³. A highest silicon dopant concentration may be in therange of about 8×10¹⁸ cm⁻³ to about 1×10²² cm⁻³, and according to someembodiments, in the range of about 8×10¹⁸ cm⁻³ to about 2×10¹⁹ cm⁻³.According to some embodiments of the present invention, a highestsilicon dopant concentration of a pattern may be at least about 1.2×10¹⁹cm⁻³ and a lowest silicon dopant concentration of the same pattern maybe no greater than about 6×10¹⁸ cm⁻³. According to still otherembodiments of the present invention, a highest silicon dopantconcentration of a pattern may be at least about 1.2×10¹⁹ cm⁻³ and aportion of the pattern having the lowest silicon dopant concentrationmay have insignificant silicon doping (i.e., nominally undoped).Moreover, patterns of modulated silicon doping may be provided withvariable thickness, variable periods, variable dopant concentrations,repeating patterns, non-repeating patterns, symmetric patterns,asymmetric patterns, etc.

Moreover, a period of modulated silicon doping may be in the range of atleast about 50 Angstroms or at least about 100 Angstroms. By way ofexample, a period of modulated silicon doping may by in the range ofabout 50 Angstroms to about 5000 Angstroms, or in the range of about 100Angstroms to about 2500 Angstroms.

According to additional embodiments of the present invention, modulatedsilicon doping in base region 501 or portions thereof may be providedusing delta doping as shown in FIG. 18. During epitaxial deposition ofbase region 501 and/or portions thereof, a silicon source gas (such assilane) may briefly be turned on and then off again to provide spikes insilicon doping at different thicknesses of base region 501. In additionto turning the silicon source gas on and off, a Group III element sourcegas for the Group III nitride (e.g., a gallium source gas) may be turnedoff or reduced while turning the silicon source gas on to furtherincrease a concentration of silicon doping at the spike. Delta dopingmay also allow a relatively low flow of the silicon source gas betweenthe spikes to provide a relatively low silicon doping between thespikes. The spikes may be relatively evenly spaced or not. According tosome embodiments of the present invention, highly silicon doped regionsof base region 501 formed by delta doping may be so thin as to besubstantially two-dimensional sheets having silicon dopantconcentrations of at least about 1×10¹² cm⁻², at least about 1×10¹³cm⁻², at least about 1×10¹⁴ cm⁻², or even at least about 1×10¹⁵ cm⁻²,with thickness of less than about 10 Angstroms or less than about 2.5Angstroms. Because the highly silicon doped regions provided using deltadoping may be substantially two-dimensional sheets, dopingconcentrations may be measured per unit area (e.g., cm⁻²). Modulationdoping may be three-dimensional and as such, the doping concentrationsmay be measured per unit volume (e.g., cm⁻³).

Moreover, delta doping may be provided in combination with modulationdoping patterns such as those illustrated in FIGS. 6-17. By way ofexample, some portions of base region 501 may be doped according to oneor more patterns of FIGS. 6-17, and other portions of base region 501may be provided with periodic delta doping as discussed above withrespect to FIG. 18. According to other embodiments of the presentinvention, periodic silicon delta doping may be superimposed on apattern of modulated silicon doping discussed above with respect toFIGS. 6-17.

FIG. 19 is a greatly enlarged cross sectional view of Group III nitridesemiconductor base region 501 of FIG. 5 illustrating modulated silicondoping according to some embodiments of the present invention. Asdiscussed above, base region 501 may include a GaN layer 12 a and asuperlattice 16 a, and modulated silicon doping may be superimposed onone of GaN layer 12 a or superlattice 16 a, on both of GaN layer 12 aand superlattice 16 a, or on portions of GaN layer 12 a and/orsuperlattice 16 a. While not shown in FIG. 19, base region 501 may alsoinclude a second relatively thin n-GaN layer between GaN layer 12 a andsuperlattice 16 a as discussed above, for example, with respect to n-GaNlayer 14 of FIGS. 1 and 2.

Superlattice 16 a, for example, may include n periods SLP1 to SLPn, andeach period of superlattice 16 a may include a layer of In_(x)Ga_(1-x)Nand a layer of In_(Y)Ga_(1-Y)N, wherein X and Y are between 0 and 1inclusive and X is not equal to Y. Accordingly, superlattice 16 a mayinclude alternating layers of In_(x)Ga_(1-x)N and In_(Y)Ga_(1-Y)N. Forexample, X=0 and a thickness of each of the alternating layers of InGaNmay be about 5 Angstroms to about 40 Angstroms thick inclusive, and athickness of each of the alternating layers of GaN may be about 5Angstroms to about 100 Angstroms thick inclusive. In some embodiments,GaN layers of superlattice 16 a may be about 70 Angstroms thick andInGaN layers may be about 30 Angstroms thick to provide a superlatticeperiod of about 100 Angstroms. Superlattice 16 a may include from about5 to about 50 superlattice periods SLP so that n may be in the range ofabout 5 and 50 (where a thickness of one superlattice period SLP equalsone repetition each of In_(X)Ga_(1-X)N and In_(Y)Ga_(1-Y)N layers thatcomprise superlattice 16 a). In some embodiments, superlattice 16 a mayinclude 25 superlattice periods SLP1 to SLP25 (e.g., n=25). In otherembodiments, superlattice 16 a may include 10 periods SLP1 to SLP10(e.g., n=10). A number of superlattice periods, however, may bedecreased by, for example, increasing thicknesses of the respectivelayers. Thus, for example, doubling a thickness of superlattice layersmay be used with half the number of superlattice periods. Alternatively,numbers and thicknesses of superlattice periods may be independent ofone another.

Superlattice 16 a may be doped with an n-type impurity such as siliconat a concentration of from about 1×10¹⁷ cm⁻³ to about 5×10¹⁹ cm⁻³.Moreover, modulated silicon doping may be provided over a thickness ofsuperlattice 16 a so that a pattern of modulated silicon doping (e.g.,as discussed above with respect to FIGS. 6-18) may be superimposed on apattern of alternating layers of superlattice 16 a (e.g., on a patternof alternating layers of InGaN and GaN of superlattice 16 a). Moreover,a period of modulated silicon doping may be greater than a period ofalternating layers of superlattice 16 a, and a period of modulatedsilicon doping may be an integer multiple of a period of alternatinglayers of superlattice 16 a. According to other embodiments of thepresent invention, a period of modulated silicon doping may beindependent of a period of alternating layers of superlattice 16 a. Aperiod of modulated silicon doping, for example, may be at least 2 timesgreater than a period of alternating layers of superlattice 16 a.

By way of example, superlattice 16 a may include alternating layers ofInGaN and GaN having respective thicknesses of about 30 Angstroms and 70Angstroms so that each superlattice period SLP1 to SLPn has a thicknessof about 100 Angstroms. In addition, a period of modulated silicondoping may be about 500 Angstroms so that each period of modulatedsilicon doping is superimposed on 5 periods SLPj to SLPj+5 ofsuperlattice 16 a. Using the square pattern (or step function) ofmodulated silicon doping discussed above with respect to FIG. 6, forexample, a first layer of relatively low silicon doping and a firstlayer of relatively high silicon doping may be provided oversuperlattice periods SLP1 to SLP5, a second layer of relatively lowsilicon doping and a second layer of relatively high silicon doping maybe provided over superlattice periods SLP6 to SLP10, a third layer ofrelatively low silicon doping and a third layer of relatively highsilicon doping may be provided over superlattice periods SLP11 to SLP15,etc., and thickness of the layers of relatively low and high silicondoping may be the same (e.g., approximately 250 Angstroms each) ordifferent.

Moreover, layers of relatively high silicon doping may have a silicondopant concentration that is at least about 1.5 times (50 percent)greater than layers of relatively low silicon dopant concentration, andaccording to some embodiments, at least about 2 times (100 percent)greater, at least about 3 times (200 percent) greater, at least about 10times (one order of magnitude) greater, at least about 100 times (twoorders of magnitude) greater, at least about 1,000 times (three ordersof magnitude) greater, or even at least about 10,000 times (four ordersof magnitude) greater. According to some embodiments of the presentinvention, layers of relatively high silicon doping may have a silicondopant concentration that is at least about 1.2×10¹⁹ cm⁻³, and layers ofrelatively low silicon doping may have a silicon dopant concentrationthat is less than about 6×10¹⁸ cm⁻³.

While a square pattern (or step function) of modulated silicon doping isdiscussed by way of example, any pattern of modulated silicon doping(such as discussed above with respect to FIGS. 6-18) may be providedaccording to embodiments of the present invention. Moreover, a patternand/or a period of modulated silicon doping may be different overdifferent portions of superlattice 16 a, and/or some portions ofsuperlattice 16 a may have modulated silicon doping while other portionsof superlattice 16 a may have relatively constant silicon doping (i.e.,unmodulated silicon doping). For example, a first pattern and/or periodof modulated silicon doping may be provide in portions of superlattice16 a adjacent GaN layer 12 a and a second pattern and/or period ofmodulated silicon doping may be provided in portions of superlattice 16a adjacent active region 503. According to other embodiments, silicondoping may be modulated at different dopant concentrations without arepeating pattern or periodicity.

In addition, silicon doped layers may be provided adjacent superlattice16 a to provide a desired average silicon dopant concentration over thesilicon doped layers and superlattice 16 a. By providing superlattice 16a between substrate 10 and active region 503, a better surface may beprovided on which to grow InGaN-based active region 503. While notwishing to be bound by any theory of operation, the inventors believethat strain effects in superlattice 16 a may provide a growth surfacethat is conducive to growth of high-quality InGaN-containing activeregion 503. Further, superlattice 16 a may influence an operatingvoltage of the device. Appropriate choice of superlattice thicknessesand composition parameters may reduce operating voltage and increaseoptical efficiency.

In addition or in an alternative, modulated silicon doping may beprovided in GaN layer 12 a. GaN layer 12 a may include a plurality ofGaN sub-layers GaN-P1 to GaN-Pm with each sub-layer including one periodof modulated silicon doping. According to some embodiments of thepresent invention, each sub-layer GaN—P may include one layer ofrelatively low silicon dopant concentration and one layer of relativelyhigh silicon dopant concentration to provide one period of a squarepattern (or step function) of modulated silicon doping as discussedabove with respect to FIG. 6. For example, each layer of relatively highsilicon dopant concentration may have a silicon dopant concentrationthat is at least 50 percent greater than each layer of relatively lowsilicon dopant concentration, and according to some embodiments, atleast 100 percent greater. For example, layers of relatively highsilicon dopant may have a silicon dopant concentration that is at leastabout 1.2×10¹⁸ cm⁻³ and a thickness less than about 1000 Angstroms, andlayers of relatively low silicon doping may have a silicon dopantconcentration that is less than about 6×10¹⁸ cm⁻³ and a thickness lessthan about 1000 Angstroms. Moreover, a period of modulated silicondoping may be less than about 1000 Angstroms, and/or thickness of eachof the layers of relatively high and low silicon dopant concentrationsmay be in the range of about 300 Angstroms to about 700 Angstroms (e.g.,about 500 Angstroms).

A same pattern and period of modulated silicon doping may extend throughboth of GaN layer 12 a and superlattice 16 a. According to otherembodiments of the present invention, a pattern and/or period ofmodulated silicon doping provided in GaN layer 12 a may be differentthan a pattern and/or period of modulated silicon doping provided insuperlattice 16 a. According to still other embodiments of the presentinvention, modulated silicon doping may be provided in only one of GaNlayer 12 a or superlattice 16 a. According to yet other embodiments ofthe present invention, different portions of GaN layer 12 a may havedifferent periods and/or patterns of modulated silicon doping, and/orone portion of GaN layer 12 a may have modulated silicon doping whileanother portion of GaN layer 12 a has relatively constant silicon doping(i.e., unmodulated silicon doping). In addition or in an alternative,modulated silicon doping may be provided in n-AlGaN buffer layer 11.Moreover, regions of buffer layer 11 and/or base region 501 may beprovided without modulated silicon doping (e.g., with a relativelyconstant silicon doping concentration or without significant silicondoping) between substrate 10 and regions with modulated silicon doping.

Use of modulated silicon doping structures in LED structures accordingto embodiments of the present invention may allow higher average silicondopant concentrations while reducing cracking of epitaxial layers (e.g.,active region 503) formed thereon. Increased silicon dopantconcentrations may reduce operating voltages by both reducing spreadingresistance (i.e., resistance in a direction parallel with respect to asurface of substrate 10) and contact resistance of a metal contact thatmay be formed thereon. A metal electrode/contact may be foamed directlyon a bottom surface of base region 501 by removing substrate 10 andbuffer layer 11 to provide a vertical device, or a metalelectrode/contact may be formed directly on a portion of a top surfaceof base region 501 by removing portions of layers/regions 32, 30, 22,and 503 (while maintaining other portions of layers/regions 32, 30, 22,and 503) to provide a horizontal device.

Due to differences in lattice constants and coefficients of thermalexpansion of GaN and SiC, GaN may be subjected to tensile stress whenformed on an SiC substrate, so that cracking may occur in the GaN and/orlayers formed thereon. Because silicon is a smaller atom than GaN,silicon dopant may increase this tensile stress. By providing modulatedsilicon dopant according to embodiments of the present invention,cracking may be reduced, n-side voltage drops may be reduced, and/orlateral current spreading may be improved.

Without being bound to any particular theory, the inventors believe thatmodulation of dopant concentrations (e.g., modulation of silicon dopantconcentrations) may improve surface morphologies of epitaxial Group IIInitride semiconductor regions/layers by reducing pitting and/orcracking. For example, sustained growth of epitaxial GaN at relativelyhigh dopant concentrations may induce facets that increaseformation/propagation of cracks/pits/dislocations. By alternating layersof relatively high and low dopant concentrations, however, the inventorsbelieve that formation/propagation of facets/dislocations/pits/cracksmay be suppressed by forming the layers of relatively low dopantconcentrations between the layers of relatively high dopantconcentrations. To the extent that dislocations are generated duringdeposition of a layer of relatively high dopant concentration,subsequent deposition of a layer of relatively low dopant concentrationmay enhance dislocation growth annihilation and/or termination of pitpropagation.

Accordingly, modulation of dopant concentrations may allow a higherdopant concentration than might otherwise be available to thereby reduceresistivity while maintaining a high crystal quality. Without modulationof dopant concentrations, silicon dopant concentrations greater thanabout 5×10¹⁸ cm⁻³ in Group III semiconductor nitride materials (e.g.,GaN) may be difficult to achieve without reducing crystal quality. Withmodulation of dopant concentrations, relatively high quality epitaxialGroup III semiconductor nitride layers may be formed with averagesilicon dopant concentrations greater than about 1×10¹⁹ cm⁻³, andaccording to some embodiments, greater than 1×10²⁰ cm⁻³ or even 1×10²¹cm⁻³.

FIG. 20 is a graph illustrating forward voltages (Vf) for differentaverage silicon doping levels of n-GaN layer 12 a in a horizontal LEDdevice (with both contacts on a same side of the LED). Sample 1represents devices fabricated with a standard average production levelof silicon doping of n-GaN layer 12 a. Samples 1.3, 1.5, 1.7, 1.8, and 2represent devices fabricated using modulated silicon doping of n-GaNlayer 12 a according to embodiments of the present invention. Moreparticularly, sample 1.3 represents devices fabricated with an averageof 1.3 times the standard average production level of silicon doping ofn-GaN layer 12 a; sample 1.5 represents devices fabricated with anaverage of 1.5 times the standard average production level of silicondoping of n-GaN layer 12 a; sample 1.7 represents devices fabricatedwith an average of 1.7 times the standard average production level ofsilicon doping of n-GaN layer 12 a; sample 1.8 represents devicesfabricated with an average of 1.8 times the standard average productionlevel of silicon doping of n-GaN layer 12 a; and sample 2 representsdevices fabricated with an average of 2 times the standard averageproduction level of silicon doping of n-GaN layer 12 a. As shown in FIG.20, increased levels of average silicon doping of n-GaN layer 12 a maysubstantially reduce a forward voltage drop through the LED devicethereby reducing operating voltage and/or increasing efficiency.Moreover, by using modulated silicon doping to provide increased averagelevels of silicon doping through n-GaN layer 12 a, crystal quality of asubsequently formed active layer(s) may be improved.

According to some embodiments of the present invention, a silicon dopantconcentration of a GaN layer 12 a of base region 501 (or portionsthereof) may be modulated according to the square pattern of FIG. 6. Forexample, each layer of relatively low silicon dopant concentration mayhave a thickness of about 700 Angstroms and a silicon dopantconcentration of about 6×10¹⁸ cm⁻³, each layer of relatively highsilicon dopant concentration may have a thickness of about 700 Angstromsand a silicon dopant concentration of about 1.2×10¹⁹ cm⁻³, and a 50Angstrom graded transition layer may be provided at each transitionbetween layers of different dopant concentration (to provide a period ofabout 1500 Angstroms). By improving a crystal quality of a subsequentlyaimed active region 503, performance of a light emitting diode (LED) maybe improved.

Some embodiments of the present invention may thus provide improvedGroup III nitride semiconductor regions/layers having reducedresistivity and/or improved crystal quality. According to someembodiments of the present invention, an epitaxial Group III nitridesemiconductor region/layer may be formed with modulated dopantconcentrations to have a sheet resistivity less that about 30ohms/square, and according to some embodiments, less than about 20ohms/square or even less than about 10 ohms/square.

Modulation of dopant concentrations according to embodiments of thepresent invention may be useful in applications where a growth substratehas a coefficient of thermal expansion (CTE) that is less than a CTE ofthe growth layer. Without modulated dopant concentrations, Group IIInitride semiconductor materials with relatively high dopantconcentrations may be prone to cracking when formed on substrates havinga lower CTE. Modulation of dopant concentrations, for example, may beuseful for epitaxial growth of a Group III nitride semiconductormaterial(s) (e.g., GaN, InGaN, AlGaN, InAlGaN, InN, AlN, InAlN, etc.)having a relatively high CTE on a silicon carbide (SiC) or silicon (Si)substrate having a relatively low CTE.

Modulation of dopant concentrations according to embodiments of thepresent invention may also be useful in applications where a Group IIInitride semiconductor material is epitaxially deposited on a substrateincluding a surface pattern such as a saw tooth surface pattern, asurface pattern of posts, a surface pattern of ridges, etc. Saw toothsurface patterns may be provided, for example, on sapphire substratesused for epitaxial growth of Group III nitride semiconductor LEDstructures, and the saw tooth surface pattern may increase introductionof facets in the epitaxial layer being grown thereon. As noted above,modulation of dopant concentrations according to embodiments of thepresent invention, may reduce formation and/or propagation of facets toimprove a crystal quality of the epitaxial layer and/or reduce oreliminate pits.

While modulated n-type silicon doping of Group III nitride semiconductorregions is discussed above by way of example, modulated doping of GroupIII nitride semiconductor base region 501 may be provided according toother embodiments of the present invention using other n-type dopantssuch as germanium (Ge), carbon (C), tin (Sn), oxygen (O), sulfur (S),selenium (Se), or any other suitable n-type dopant. According to stillother embodiments of the present invention, modulated doping of GroupIII nitride semiconductor regions may be provided using p-type dopantssuch as magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), or anyother suitable p-type dopant. With a p-type dopant like magnesium,conductivity types of layers of FIGS. 1, 2, 3, 4, 5, and 11 may bereversed relative to those discussed above. Moreover, modulated dopingmay be provided according to other embodiments of the present inventionusing co-doping, for example, using a combination of two or moredifferent n-type dopants or using a combination of two or more differentp-type dopants. According to still other embodiments of the presentinvention, modulated doping may be provided using different dopants ofthe same conductivity type in alternating layers of high and low dopantconcentrations. According to other embodiments of the present invention,doped Group III nitride semiconductor regions (p-type or n-type) may beformed on respective LED active regions.

Doped Group III nitride semiconductor regions with modulated dopingaccording to embodiments of the present invention may thus have n-typeconductivity or p-type conductivity. Moreover, n-type doped Group IIInitride semiconductor regions with modulated doping may have a very lowaverage n-type majority carrier concentration (N⁻⁻), a low averagen-type majority carrier concentration (N⁻), a moderate n-type majoritycarrier concentration (N), a high average n-type majority carrierconcentration (N⁺), or a very high average n-type majority carrierconcentration (N⁺⁺). P-type doped Group III nitride semiconductorregions with modulated doping may have a very low average p-typemajority carrier concentration (P⁻⁻), a low average p-type majoritycarrier concentration (P⁻), a moderate p-type majority carrierconcentration (P), a high average p-type majority carrier concentration(P⁺), or a very high average p-type majority carrier concentration(P⁺⁺).

Semiconductor layers/regions/structures 11, 501, 12 a, 16 a, 503, 22,30, and 32 of FIGS. 5 and 11 may be formed by epitaxial deposition onsilicon carbide substrate 11. According to some embodiments, theselayers may be formed continuously in a same reaction chamber by changingflows of reactant source gases during the deposition. A desired patternof modulated silicon doping may be provided, for example, by increasingand decreasing and/or alternating off/on a flow of a silicon source gas(e.g., silane) during deposition of GaN layer 12 a and/or superlattice16 a.

Moreover, embodiments of the present invention may be used to provideeither vertical or horizontal devices. While FIG. 5 shows ohmic metalcontact 23 on substrate 10 by way of example, substrate 10 and bufferlayer 11 may be removed before forming ohmic metal contact 23 so thatohmic metal contact is formed directly on base region 501 to provide avertical device with metal contacts on opposite sides of the device.According to other embodiments of the present invention, portions oflayers/regions 32, 30, 22, and 503 may be removed (while maintainingportions of layers/regions 32, 30, 22, and 503) to expose a portion ofbase region 501, and an ohmic metal contact may be formed on the exposedportion of base region 501 to provide a horizontal device with bothmetal contacts on a same side of the device. While embodiments of thepresent invention have been described with reference to gallium nitridebased devices, teachings and benefits of the present invention may alsobe provided in other Group III nitrides.

Group III nitride based LEDs according to some embodiments of thepresent invention, for example, may be fabricated on growth substrates(such as a silicon carbide substrates) to provide horizontal devices(with both electrical contacts on a same side of the LED) or verticaldevices (with electrical contacts on opposite sides of the LED).Moreover, the growth substrate may be maintained on the LED afterfabrication or removed (e.g., by etching, grinding, polishing, etc.).The growth substrate may be removed, for example, to reduce a thicknessof the resulting LED and/or to reduce a forward voltage through avertical LED. A horizontal device (with or without the growthsubstrate), for example, may be flip chip bonded (e.g., using solder) toa carrier substrate or printed circuit board, or wire bonded. A verticaldevice (without or without the growth substrate) may have a firstterminal solder bonded to a carrier substrate or printed circuit boardand a second terminal wire bonded to the carrier substrate or printedcircuit board. Examples of vertical and horizontal LED chip structuresare discussed by way of example in U.S. Publication No. 2008/0258130 toBergmann et al. and in U.S. Publication No. 2006/0186418 to Edmond etal., the disclosures of which are hereby incorporated herein in theirentirety by reference.

While modulated doping has been discussed above by way of example inGroup III nitride light emitting diode structures by way of example,modulated doping according to embodiments of the present invention maybe used in other devices and/or in other semiconductor materials. Forexample, modulated doping according to embodiments of the presentinvention may be used in semiconductor devices such as light emittingdiodes, Shottkey diodes, p-n diodes, transistors, thyristors,photodetectors, lasers, or any other semiconductor device wherereduction of series resistance may be useful, for example, to increaseefficiency, reduce response time, etc. Moreover, modulated dopingaccording to embodiments of the present invention may be provided insemiconductor materials such as silicon doped Group III nitridesemiconductor materials, n-type doped silicon carbide, p-type dopedsilicon, silicon doped gallium arsenide, etc.

In the drawings and specification, there have been disclosed embodimentsof the invention and, although specific terms are employed, they areused in a generic and descriptive sense only and not for purposes oflimitation, the scope of the invention being set forth in the followingclaims.

1. A semiconductor device comprising: a doped semiconductor regionwherein a dopant concentration of the semiconductor region is modulatedover a plurality of intervals wherein each interval includes at leastone portion having a relatively low dopant concentration and at leastone portion having a relatively high dopant concentration; and asemiconductor active region on the doped semiconductor region.
 2. Asemiconductor device according to claim 1 wherein the semiconductorregion comprises a doped Group III nitride semiconductor region.
 3. Asemiconductor device according to claim 1 wherein the dopedsemiconductor region includes first and second adjacent intervals ofmodulated dopant concentration, wherein a first portion of the firstinterval has a first relatively low dopant concentration and a secondportion of the first interval has a first relatively high dopantconcentration, wherein a first portion of the second interval has asecond relatively low dopant concentration and a second portion of thesecond interval has a second relatively high dopant concentration,wherein the first relatively high dopant concentration is greater thanthe first and second relatively low dopant concentrations, and whereinthe second relatively low dopant concentration is less than the firstand second relatively high dopant concentrations.
 4. A semiconductordevice according to claim 3 wherein the second portion of the firstinterval is between the first portions of the first and secondintervals, and wherein the first portion of the second interval isbetween the second portions of the first and second intervals.
 5. Asemiconductor device according to claim 4 wherein the first and secondrelatively high dopant concentrations are different, and/or wherein thefirst and second relatively low dopant concentrations are different. 6.A semiconductor device according to claim 4 wherein the first and secondrelatively high dopant concentrations are the same, and/or wherein thefirst and second relatively low dopant concentrations are the same.
 7. Asemiconductor device according to claim 1 wherein the semiconductoractive region comprises a multi-quantum well structure.
 8. Asemiconductor device according to claim 1 wherein the plurality ofintervals define a repeating pattern of different dopant concentrations.9. A semiconductor device according to claim 1 wherein the dopedsemiconductor region comprises a silicon doped Group III nitridesemiconductor region and wherein a dopant concentration of silicon ismodulated in the doped Group III nitride semiconductor region.
 10. Asemiconductor device according to claim 1 wherein the dopedsemiconductor region comprises a superlattice and wherein the modulateddopant concentration is provided through at least portions of thesuperlattice.
 11. A semiconductor device according to claim 10 whereinthe intervals of the modulated dopant concentration define a repeatingpattern with each interval defining a period of the pattern, wherein theperiod of the pattern is greater than a period of the superlattice. 12.A semiconductor device according to claim 10 wherein the superlatticecomprises a superlattice pattern of alternating layers having differentconcentrations of indium.
 13. A semiconductor device according to claim1 wherein the doped semiconductor region comprises a GaN layer andwherein the modulated dopant concentration is provided through at leastportions of the GaN layer.
 14. A semiconductor device according to claim13 further comprising: wherein the doped semiconductor region comprisesa Group III nitride superlattice between the GaN layer and the activeregion.
 15. A semiconductor device according to claim 1 wherein arelatively high dopant concentration of a respective interval is atleast 50 percent greater than a relatively low dopant concentration ofthe respective interval.
 16. A semiconductor device according to claim15 wherein the relatively high dopant concentration of the respectiveinterval is at least about 1.2×10¹⁹ cm⁻³ and wherein the relatively lowdopant concentration of the respective interval is no greater than about6×10¹⁸ cm⁻³.
 17. A semiconductor device according to claim 1 furthercomprising: a silicon carbide substrate on the doped semiconductorregion so that the doped semiconductor region is between the siliconcarbide substrate and the semiconductor active region.
 18. Asemiconductor device according to claim 1 wherein the dopedsemiconductor region comprises a doped Group III nitride semiconductorregion, the semiconductor device further comprising: a silicon carbidesubstrate; and a doped AlGaN buffer layer between the silicon carbidesubstrate and the doped Group III nitride semiconductor region whereinthe doped Group III nitride semiconductor region is between the dopedAlGaN buffer layer and the semiconductor active region, and wherein adopant concentration of the doped AlGaN buffer layer is modulated.
 19. Asemiconductor device according to claim 1 further comprising: asemiconductor contact layer on the semiconductor active region so thatthe semiconductor active region is between the semiconductor contactlayer and the doped semiconductor region, and wherein the semiconductorcontact layer and the doped semiconductor region have oppositeconductivity types.
 20. A method of forming a semiconductor device, themethod comprising: forming a doped semiconductor region wherein a dopantconcentration of the semiconductor region is modulated over a pluralityof intervals wherein each interval includes at least one portion havinga relatively low dopant concentration and at least one portion having arelatively high dopant concentration; and forming a semiconductor activeregion so that a current path is defined through the doped semiconductorregion and the semiconductor active region.
 21. A method according toclaim 20 wherein the doped semiconductor region comprises a doped GroupIII nitride semiconductor region.
 22. A method according to claim 20wherein the doped semiconductor region includes first and secondadjacent intervals of modulated dopant concentration, wherein a firstportion of the first interval has a first relatively low dopantconcentration and a second portion of the first interval has a firstrelatively high dopant concentration, wherein a first portion of thesecond interval has a second relatively low dopant concentration and asecond portion of the second interval has a second relatively highdopant concentration, wherein the first relatively high dopantconcentration is greater than the first and second relatively low dopantconcentrations, and wherein the second relatively low dopantconcentration is less than the first and second relatively high dopantconcentrations.
 23. A method according to claim 22 wherein the secondportion of the first interval is between the first portions of the firstand second intervals, and wherein the first portion of the secondinterval is between the second portions of the first and secondintervals.
 24. A method according to claim 23 wherein the first andsecond relatively high dopant concentrations are different, and/orwherein the first and second relatively low dopant concentrations aredifferent.
 25. A method according to claim 23 wherein the first andsecond relatively high dopant concentrations are the same, and/orwherein the first and second relatively low dopant concentrations arethe same.
 26. A method according to claim 20 wherein the semiconductoractive region comprises a multi-quantum well structure.
 27. A methodaccording to claim 20 wherein forming a semiconductor active regionprecedes forming the doped semiconductor region, wherein forming thedoped semiconductor region comprises forming the doped semiconductorregion on the semiconductor active region.
 28. A method according toclaim 20 wherein the plurality of intervals define a repeating patternof different dopant concentrations.
 29. A method according to claim 20wherein the doped semiconductor region comprises a silicon doped GroupIII nitride semiconductor region and wherein a dopant concentration ofsilicon is modulated in the Group III nitride semiconductor region. 30.A method according to claim 20 wherein the doped semiconductor regioncomprises a superlattice and wherein the modulated dopant concentrationis provided through at least portions of the superlattice.
 31. A methodaccording to claim 30 wherein the intervals of the modulated dopantconcentration define a repeating pattern with each interval defining aperiod of the pattern, wherein the period of the pattern is greater thana period of the superlattice.
 32. A method according to claim 30 whereinthe superlattice comprises a superlattice pattern of alternating layershaving different concentrations of indium.
 33. A method according toclaim 20 wherein the doped semiconductor region comprises a GaN layerand wherein the modulated dopant concentration is provided through atleast portions of the GaN layer.
 34. A method according to claim 33wherein forming the doped semiconductor region precedes forming thesemiconductor active region, wherein the doped semiconductor regioncomprises a Group III nitride superlattice between the GaN layer and theactive region.
 35. A method according to claim 20 wherein a relativelyhigh dopant concentration of a respective interval is at least 50percent greater than a relatively low dopant concentration of therespective interval.
 36. A method according to claim 35 wherein therelatively high dopant concentration of the respective interval is atleast about 1.2×10¹⁹ cm⁻³ and wherein the relatively low dopantconcentration of the respective interval is no greater than about 6×10¹⁸cm⁻³.
 37. A method according to claim 20 wherein forming the dopedsemiconductor region comprises forming a doped Group III nitridesemiconductor region on a silicon carbide substrate, wherein forming thesemiconductor active region comprises forming the semiconductor activeregion on the doped Group III nitride semiconductor region so that thedoped Group III nitride semiconductor region is between the siliconcarbide substrate and the semiconductor active region.
 38. A methodaccording to claim 20 further comprising: before forming the dopedsemiconductor region, forming a doped AlGaN buffer layer on a siliconcarbide substrate, wherein forming the doped semiconductor regioncomprises forming a Group III nitride semiconductor region on the AlGaNbuffer layer, and wherein a dopant concentration of the doped AlGaNbuffer layer is modulated.
 39. A method according to claim 20 furthercomprising: forming a semiconductor contact layer on the semiconductoractive region so that the semiconductor active region is between thesemiconductor contact layer and the doped semiconductor region whereinthe semiconductor contact layer and the doped semiconductor region haveopposite conductivity types.
 40. A semiconductor device comprising: adoped Group III nitride semiconductor region wherein a dopantconcentration of the Group III nitride semiconductor region is modulatedto provide a sheet resistivity of less than about 30 ohms/square.
 41. Asemiconductor device according to claim 40 wherein the doped Group IIInitride semiconductor region comprises a silicon doped GaN semiconductorlayer.
 42. A semiconductor device according to claim 40 wherein theGroup III nitride semiconductor region is modulated to provide a sheetresistivity of less than about 20 ohms/square.
 43. A semiconductordevice according to claim 40 wherein the Group III nitride semiconductorregion is modulated to provide a sheet resistivity of less than about 10ohms/square.